Supervisor(s):Dr. Yalon Eilam
Crossbar arrays of non-volatile memory devices represent one possible path for implementing massively-parallel and highly energy-efficient neuromorphic computing systems. Phase change memory (PCM) is a mature memory technology and a leading candidate as a building block for neuromorphic computing hardware. One of the key limitations to implement PCM in artificial neural networks hardware is the non-linear nature of its resistance changes during programming. The goal of this project is to vary the programming pulse width of PCM devices in order to access a linear regime of the resistance change that will enable analog-type PCM. The project will include performing electrical measurements of PCM devices in a probe-station using a pulse generator, scope, and parameter analyzer.